Method of fabricating semiconductor integrated circuit device

Details Method of fabricating semiconductor integrated circuit device Method of fabricating semiconductor integrated circuit device

2007-05-08

2007-05-08

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S153000, C438S154000, C438S651000, C438S649000, C438S682000, C257SE21199, C257SE21336, C257SE21435

Reexamination Certificate

active

11006702

ABSTRACT:
A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETs by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

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