Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-04-14
2011-11-08
Pizarro, Marcos D. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S242000, C438S243000, C257S296000, C257S306000, C257S307000, C257S308000, C257S311000, C257S330000, C257S332000, C257SE27091, C257SE27084
Reexamination Certificate
active
08053307
ABSTRACT:
A semiconductor device may include a substrate having a cell active region. A cell gate electrode may be formed in the cell active region. A cell gate capping layer may be formed on the cell gate electrode. At least two cell epitaxial layers may be formed on the cell active region. One of the at least two cell epitaxial layers may extend to one end of the cell gate capping layer and another one of the at least two cell epitaxial layers may extend to an opposite end of the cell gate capping layer. Cell impurity regions may be disposed in the cell active region. The cell impurity regions may correspond to a respective one of the at least two cell epitaxial layers.
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Kim Bong-Soo
Lee Kang-Yoon
Seo Hyeoung-Won
Yoon Jae-Man
Harness & Dickey & Pierce P.L.C.
Montalvo Eva Yan
Pizarro Marcos D.
Samsung Electronics Co,. Ltd.
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