Method of fabricating semiconductor device using selective...

Details Method of fabricating semiconductor device using selective... Method of fabricating semiconductor device using selective...

2008-04-01

2008-04-01

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S044000, C438S360000, C438S429000, C257SE21562

Reexamination Certificate

active

07351633

ABSTRACT:
A method of fabricating a semiconductor device using selective epitaxial growth (SEG) is disclosed. The method comprises; forming a seed window exposing a portion of a substrate through an interlayer insulating layer, growing a single crystal silicon SEG layer in the seed window using the exposed portion of the substrate as a seed, depositing an amorphous silicon layer on the interlayer insulating layer and in contact with the SEG layer, and performing an annealing process on the amorphous silicon layer over an annealing interval, and during the annealing interval applying microwave energy to the amorphous silicon layer.

REFERENCES:
patent: 4840816 (1989-06-01), Appleton et al.
patent: 5073516 (1991-12-01), Moslehi
patent: 2007/0166963 (2007-07-01), Son et al.

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