Method of fabricating semiconductor device having source/drain l

Details Method of fabricating semiconductor device having source/drain l Method of fabricating semiconductor device having source/drain l

1998-01-28

1999-08-31

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438564, 438592, 438595, H01L 21336

Patent

active

059465786

ABSTRACT:
An oxide film is deposited on a semiconductor substrate on which a field oxide film and a gate electrode are formed. The oxide film is etched back to form a first sidewall insulating film made of the oxide film on a side surface of the gate electrode. Then a silicon film is selectively grown on the gate electrode and on the semiconductor substrate. Thereafter a thermal oxide film is formed on a surface of the silicon film by thermally oxidizing. In the step of thermal oxidation, a thin silicon film deposited on a part of the first sidewall insulating film and a part of the field oxide film is fully oxidized. Thereafter, the thermal oxide film is etched back and thereby a second sidewall insulating film made of the thermal oxide film is formed on a side surface of the silicon film.

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