Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-07-25
1999-08-31
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438449, 438298, H01L 21336
Patent
active
059465778
ABSTRACT:
In a method of manufacturing a semiconductor device, a first oxide film is formed on a semiconductor substrate of the first conductivity type by using, as a mask, an oxidation preventing film formed in an element formation region. The oxidation preventing film is selectively etched and removed by using a patterned resist as a mask, thereby exposing the surface of the semiconductor substrate. An impurity of the second conductivity type is implanted in an exposed portion of the semiconductor device by using the resist as a mask, thereby forming an impurity diffusion layer of the second conductivity type. Thermal oxidation is performed while leaving the oxidation preventing film after the resist is removed, thereby forming a second oxidation film having a predetermined thickness on the surface of the impurity diffusion layer. Thermal oxidation is performed after the oxidation preventing film is removed, thereby forming a third thin oxide film on the surface of the semiconductor substrate.
REFERENCES:
patent: 5418176 (1995-05-01), Yang et al.
patent: 5422300 (1995-06-01), Pfiester et al.
Japanese Patent Office Action Dated Nov. 17, 1998 Along with a Translation of Same.
Chang Joni
NEC Corporation
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