Method of fabricating semiconductor device having multiple...

Details Method of fabricating semiconductor device having multiple... Method of fabricating semiconductor device having multiple...

2010-08-05

2011-10-25

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C438S769000, C438S770000, C438S775000, C257S391000, C257S392000, C257SE21625

Reexamination Certificate

active

08043916

ABSTRACT:
A method of fabricating a semiconductor device is provided. The method includes preparing a semiconductor substrate having first and second regions, forming a mask layer pattern on the second region, growing an oxidation retarding layer on the first region and removing the mask layer pattern. The method further includes growing a silicon oxide layer on the semiconductor substrate to form gate insulating layers having different thicknesses from one another on the first and second regions.

REFERENCES:
patent: 6080682 (2000-06-01), Ibok
patent: 6709932 (2004-03-01), Krishnan et al.
patent: 6869846 (2005-03-01), Hsu et al.
patent: 7091074 (2006-08-01), Han et al.
patent: 7563726 (2009-07-01), Cho et al.

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