Method of fabricating semiconductor device having multiple...

Details Method of fabricating semiconductor device having multiple... Method of fabricating semiconductor device having multiple...

2007-10-23

2010-12-07

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S392000, C257SE21540

Reexamination Certificate

active

07846790

ABSTRACT:
A method of fabricating a semiconductor device having multiple gate dielectric layers and a semiconductor device fabricated thereby, in which the method includes forming an isolation layer defining first and second active regions in a semiconductor substrate. A passivation layer is formed on the substrate having the isolation layer. A first patterning process is carried out that etches the passivation layer on the first active region to form a first opening exposing the first active region, and a first dielectric layer is formed in the exposed first active region. A second patterning process is carried out, which etches the passivation layer on the second active region to form a second opening exposing the second active region, and a second dielectric layer is formed in the exposed second active region.

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Korean Notice of Allowability issued on Dec. 31, 2007.

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