Method of fabricating semiconductor device having gate...

Details Method of fabricating semiconductor device having gate... Method of fabricating semiconductor device having gate...

2008-06-30

2010-11-02

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S279000, C438S299000, C257SE21632

Reexamination Certificate

active

07824975

ABSTRACT:
A method of fabricating a semiconductor device having a gate spacer layer with a uniform thickness wherein a gate electrode layer pattern is formed on a substrate and ion implantation processes of respectively different doses are formed on side walls of the gate electrode layer patterns in respective first and second regions of the substrate. A first gate spacer layer is formed on the gate electrode layer pattern where the ion implantation process is performed. A second gate spacer layer is formed on the first gate spacer layer.

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patent: 6815320 (2004-11-01), Kim et al.
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patent: 2006/0194381 (2006-08-01), Wei et al.
patent: 2006/0281273 (2006-12-01), Watanabe et al.

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