Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-18
2008-11-04
Smith, Matthew S. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S410000, C438S425000, C438S426000, C438S452000, C257SE21082, C257SE21267, C257SE21282, C257SE21283, C257SE21284
Reexamination Certificate
active
07446000
ABSTRACT:
A method of fabricating a semiconductor device including gate dielectrics having different thicknesses may be provided. A method of fabricating a semiconductor device may include providing a substrate having a higher voltage device region and a lower voltage device region, forming an anti-oxidation layer on the substrate, and selectively removing portions of the anti-oxidation layer on the substrate. The method may also include performing a first thermal oxidization on the substrate to form a field oxide layer on the selectively removed portions of the anti-oxidation layer, removing the anti-oxidation layer disposed on the higher voltage device region, performing a second thermal oxidization on the substrate to form a central higher voltage gate oxide layer on the higher voltage device region, removing the anti-oxidation layer disposed on the lower voltage device region, and performing a third thermal oxidization on the substrate to form a lower voltage gate oxide layer on the lower voltage device region.
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Lee Mueng-ryul
Lee Soo-cheol
Lee Sun-hak
Yi Sang-bae
Yoo Kwang-dong
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Singal Ankush K
Smith Matthew S.
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