Method of fabricating semiconductor device having capacitor

Details Method of fabricating semiconductor device having capacitor Method of fabricating semiconductor device having capacitor

2005-03-15

2005-03-15

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S253000, C438S396000, C438S399000

Reexamination Certificate

active

06867096

ABSTRACT:
Methods are provided for fabricating semiconductor devices having capacitors, which prevent lower electrodes of the capacitors from breaking or collapsing and which provide increased capacitance of the capacitors. For instance, a method includes forming a first insulating layer on a semiconductor substrate, forming a first hole in the first insulating layer, forming a contact plug in the first hole, forming a second insulating layer having a landing pad, wherein the landing pad contacts an upper surface of the contact plug, forming an etch stop layer on the landing pad and the second insulating layer, forming a third insulating layer on the etch stop layer; forming a third hole through the third insulating layer and etch stop layer to expose the landing pad, selectively etching the exposed landing pad, forming a lower electrode on the selectively etched landing pad, and then forming a capacitor by forming a dielectric layer and an upper electrode on the lower electrode.

REFERENCES:
patent: 6768154 (2004-07-01), Miyajima
patent: 2003-0001917 (2003-01-01), None

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