Method of fabricating semiconductor device and synchronous...

Details Method of fabricating semiconductor device and synchronous... Method of fabricating semiconductor device and synchronous...

2011-08-02

2011-08-02

Brewster, William M. (Department: 2823)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S068000, C438S710000

Reexamination Certificate

active

07988874

ABSTRACT:
Provided are a method of fabricating a semiconductor device and synchronous pulse plasma etching equipment for the same. The method includes outputting a first radio frequency (RF) power and a control signal and outputting a second RF power. The first RF power is pulse-width modulated to have a first frequency and a first duty ratio, and is applied to a first electrode in a plasma etching chamber. The control signal includes information on a phase of the first RF power. The second RF power is pulse-width modulated to have the first frequency and a second duty ratio smaller than the first duty ratio, is applied to a corresponding second electrode among second electrodes in the plasma etching chamber, and is supplied for a time section in which the first RF power is supplied.

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