Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2010-01-29

2011-10-25

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S231000, C438S303000, C438S527000, C257SE21433, C257SE21437

Reexamination Certificate

active

08043922

ABSTRACT:
A method of fabricating a semiconductor device, can be provided by forming gate structures for transistors on a semiconductor substrate in a cell region and in a peripheral circuit region. An offset spacer can be formed including a first material on the gate structures. A first ion implantation can be done using the gate structures and the offset spacer as an ion implantation mask to form source/drain regions. A material layer can be formed including a second material on the semiconductor substrate and on the gate structures. A material layer can be formed of a third material, having an etch selectivity with respect to the second material, on the material layer of the second material. An etch-back can be performed the material layer comprising the third material in the cell region and in the peripheral region, to simultaneously expose the source/drains region in the peripheral region and not expose the source/drain regions in the cell region.

REFERENCES:
patent: 2006/0019456 (2006-01-01), Bu et al.
patent: 2007/0281416 (2007-12-01), Baars et al.
patent: 2008/0160691 (2008-07-01), Lim
patent: 2009/0039442 (2009-02-01), Han et al.
patent: 1020000055847 (2000-09-01), None
patent: 1020030001920 (2003-01-01), None
patent: 1020060036705 (2006-05-01), None
patent: 1020060133700 (2006-12-01), None

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4296707