Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2007-08-02

2010-12-07

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C438S261000, C257S308000, C257SE21020

Reexamination Certificate

active

07846801

ABSTRACT:
Disclosed is a method of fabricating a semiconductor device including a multi-gate transistor. The method of fabricating a semiconductor device includes providing a semiconductor device having a number of active patterns which extend in a first direction, are separated by an isolation layer, and covered with a first insulating layer; forming a first groove by etching the isolation layer located between the active patterns adjacent to each other in the first direction; burying the first groove with a passivation layer; forming a second groove exposing at least a portion of both sides of the active patterns by etching the isolation layer located between the active patterns in a second direction intersecting the first direction; removing the passivation layer in the first groove; and forming a gate line filling at least a portion of the second groove and extending in the second direction.

REFERENCES:
patent: 05-218416 (1993-08-01), None
patent: 06-314739 (1994-11-01), None
patent: 11-054633 (1999-02-01), None
patent: 2002-016081 (2002-01-01), None
patent: 1020000016934 (2000-03-01), None
patent: 1020050078749 (2005-08-01), None
patent: 10200501016278 (2005-11-01), None
English Abstract for Publication No. 05-218416.
English Abstract for Publication No. 06-314739.
English Abstract for Publication No. 11-054633.
English Abstract for Publication No. 1020000016934.
English Abstract for Publication No. 2002-016081.
English Abstract for Publication No. 1020050078749.
English Abstract for Publication No. 1020050106278.

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