Method of fabricating self-aligned contact structures

Details Method of fabricating self-aligned contact structures Method of fabricating self-aligned contact structures

2006-04-04

2006-04-04

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S230000

Reexamination Certificate

active

07022567

ABSTRACT:
A method of fabricating self-aligned contact structures comprising providing a semiconductor substrate having at least two conductive structures thereon. The conductive structures are positioned beside the desired self-aligned contact structures having a plurality of masking structures thereon. Each masking structure has a top surface and a vertical surface. A dielectric layer is formed over the semiconductor substrate. A portion of the dielectric layer is removed by etching to expose the top surface and the vertical surface of each masking structure. A plurality of spacers is formed on the exposed vertical surface. While subsequently forming the self-aligned contact structures between two conductive structures, the peripheral of the nitride spacers has the low parasitic capacitance.

REFERENCES:
patent: 6281064 (2001-08-01), Mandelman et al.

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