Method of fabricating Schottky barrier FinFET device

Details Method of fabricating Schottky barrier FinFET device Method of fabricating Schottky barrier FinFET device

2010-04-13

2010-12-14

Purvis, Sue A. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21409

Reexamination Certificate

active

07851287

ABSTRACT:
A Schottky barrier FinFET device and a method of fabricating the same are provided. The device includes a lower fin body provided on a substrate. An upper fin body having first and second sidewalls which extend upwardly from a center of the lower fin body and face each other is provided. A gate structure crossing over the upper fin body and covering an upper surface of the upper fin body and the first and second sidewalls is provided. The Schottky barrier FinFET device includes a source and a drain which are formed on the sidewalls of the upper fin body adjacent to sidewalls of the gate structure and made of a metal material layer formed on an upper surface of the lower fin body positioned at both sides of the upper fin body, and the source and drain form a Schottky barrier to the lower and upper fin bodies.

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