Method of fabricating nonvolatile memory device

Details Method of fabricating nonvolatile memory device Method of fabricating nonvolatile memory device

2010-01-13

2011-12-13

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S267000, C438S268000, C438S424000, C438S446000, C438S637000, C257SE21613, C257SE21614, C257SE21645, C257SE21679, C257SE21681

Reexamination Certificate

active

08076198

ABSTRACT:
A method of fabricating a nonvolatile memory device with a three-dimensional structure includes alternately stacking first and second material layers in two or more layers on a semiconductor substrate, forming trenches penetrating the stacked first and second material layers by performing a first etching process, and removing the second material layers exposed in the trenches by performing a second etching process. The first and second material layers are formed of materials that have the same main component but have different impurity contents, respectively.

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