Method of fabricating non-volatile memory device having...

Details Method of fabricating non-volatile memory device having... Method of fabricating non-volatile memory device having...

2007-02-20

2007-02-20

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S259000, C438S260000, C438S261000, C438S262000, C438S263000, C438S264000, C438S265000, C438S266000, C438S267000, C438S954000, C438S585000, C438S588000, C438S591000, C438S592000, C438S593000, C438S594000, C257SE21180, C257SE21177

Reexamination Certificate

active

11146501

ABSTRACT:
in methods of fabricating a non-volatile memory device having a local silicon-oxide-nitride-oxide-silicon (SONOS) gate structure, a semiconductor substrate having a cell transistor area, a high voltage transistor area, and a low voltage transistor area, is prepared. At least one memory storage pattern defining a cell gate insulating area on the semiconductor substrate within the cell transistor area is formed. An oxidation barrier layer is formed on the semiconductor substrate within the cell gate insulating area. A lower gate insulating layer is formed on the semiconductor substrate within the high voltage transistor area. A conformal upper insulating layer is formed on the memory storage pattern, the oxidation barrier layer, and the lower gate insulating layer. A low voltage gate insulating layer having a thickness which is less than a combined thickness of the upper insulating layer and the lower gate insulating layer is formed on the semiconductor substrate within the low voltage transistor area.

REFERENCES:
patent: 6204159 (2001-03-01), Chang et al.
patent: 6429073 (2002-08-01), Furuhata et al.
patent: 6664155 (2003-12-01), Kasuya
patent: 7029976 (2006-04-01), Nagarad et al.
patent: 2002/0197800 (2002-12-01), Hashimoto et al.
patent: 2005/0224866 (2005-10-01), Higashi et al.
patent: 2002-0073959 (2002-09-01), None
patent: 2003-0013763 (2003-02-01), None

Affiliated with

Also associated with

Rating

Method of fabricating non-volatile memory device having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating non-volatile memory device having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating non-volatile memory device having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3869479