Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-26
2011-07-26
Loke, Steven (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C365S151000, C257SE51039
Reexamination Certificate
active
07985646
ABSTRACT:
A method of fabricating a nanowire memory device, and a system of controlling nanowire formation used in the same method are provided. In the method of fabricating a nanowire memory device which includes a substrate; an electrode formed on the substrate and insulated from the substrate; and a nanowire having its one end connected with the electrode and formed at a given length, the method comprises: forming an electrode and a dummy electrode to be paired with the electrode on the substrate; forming the nanowire between the electrode and the dummy electrode while measuring a current flowing between the electrode and the dummy electrode, and cutting power applied between the electrode and the dummy electrode when the current measured is a given value; and removing the dummy electrode.
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Kim Cheol-soon
Lee Jung-Hoon
Yoo Jin-gyoo
Goodwin David
Loke Steven
Samsung Electronics Co,. Ltd.
Seoul National University Industry Foundation
Sughrue & Mion, PLLC
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