Method of fabricating MOS transistor using total gate...

Details Method of fabricating MOS transistor using total gate... Method of fabricating MOS transistor using total gate...

2006-09-05

2006-09-05

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S595000, C438S655000

Reexamination Certificate

active

07101776

ABSTRACT:
There is provided a method of fabricating a MOS transistor using a total gate silicidation process. The method includes forming an insulated gate pattern on a semiconductor substrate. The insulated gate pattern includes a silicon pattern and a sacrificial layer pattern, which are sequentially stacked. Spacers covering sidewalls of the gate pattern are formed, and source/drain regions are formed by injecting impurity ions into the semiconductor substrate using the spacers and the gate pattern as ion injection masks. The silicon pattern is exposed by removing the sacrificial layer pattern on the semiconductor substrate having the source/drain regions. The exposed silicon pattern is fully converted into a gate silicide layer, and concurrently a source/drain silicide layer is selectively formed on the surface of the source/drain regions.

REFERENCES:
patent: 6362063 (2002-03-01), Maszara et al.
patent: 6518155 (2003-02-01), Chau et al.
Tavel, B., et al., “Totally Silicided (CoSi2) Polysilicon: a novel approach to very low-resistive gate (˜Ω/□) without metal CMP nor etching,”IEDM 2001, p. 825-828, Dec. 2001.

Affiliated with

Also associated with

Rating

Method of fabricating MOS transistor using total gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating MOS transistor using total gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating MOS transistor using total gate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3544653