Method of fabricating microelectronic device using super...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S626000, C438S627000, C438S629000, C438S634000, C438S637000, C438S636000, C257SE21579

Reexamination Certificate

active

11033712

ABSTRACT:
Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substrate, forming an HSQ layer covering at least a portion of the substrate, and thereafter removing at least portions of the HSQ layer using super critical fluid CO2.

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First Office Action and English translation, issued by The Patent Office of the People's Republic of China for related Application No. 2005100565652, dated Jan. 19, 2007.

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