Method of fabricating microelectronic device using super...

Details Method of fabricating microelectronic device using super... Method of fabricating microelectronic device using super...

2008-04-01

2008-04-01

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S626000, C438S627000, C438S629000, C438S634000, C438S637000, C438S636000, C257SE21579

Reexamination Certificate

active

07351635

ABSTRACT:
Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substrate, forming an HSQ layer covering at least a portion of the substrate, and thereafter removing at least portions of the HSQ layer using super critical fluid CO2.

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First Office Action and English translation, issued by The Patent Office of the People's Republic of China for related Application No. 2005100565652, dated Jan. 19, 2007.

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