Method of fabricating microelectronic capacitors having tantalum

Details Method of fabricating microelectronic capacitors having tantalum Method of fabricating microelectronic capacitors having tantalum

1996-09-10

1998-06-09

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438775, 438250, H01L 218242

Patent

active

057633002

ABSTRACT:
A microelectronic capacitor is formed by nitrating the surface of a conducting electrode on a microelectronic substrate. The nitrated surface of the conductive electrode is then oxidized. The nitrating and oxidizing steps collectively form a film of silicon oxynitride on the conductive electrode. A tantalum pentoxide film is then formed on the oxidized and nitrated surface of the conductive electrode. The tantalum pentoxide film may then be thermally treated in the presence of oxygen gas. High performance microelectronic capacitors are thereby provided.

REFERENCES:
patent: 5452178 (1995-09-01), Emesh et al.
Zaima et al., J. Electrochem. Soc., vo. 137, No. 9, pp. 2876-2879, Sep. 1990.

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