Method of fabricating local interconnection using selective...

Details Method of fabricating local interconnection using selective... Method of fabricating local interconnection using selective...

2006-05-23

2006-05-23

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S598000, C438S607000, C438S674000

Reexamination Certificate

active

07049218

ABSTRACT:
In a method of fabricating local interconnection, a selective epitaxial growth seed layer pattern is formed on a region of a semiconductor substrate where a local interconnection is to be formed. A selective epitaxial layer is formed by performing epitaxial growth on the resultant structure. The resistance of the selective epitaxial layer is reduced to complete the local interconnection.

REFERENCES:
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patent: 5893741 (1999-04-01), Huang
patent: 6335250 (2002-01-01), Egi
patent: 2003/0011001 (2003-01-01), Chevalier et al.
patent: 2000114262 (2000-04-01), None
Wolf et al., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 2000, p. 245.

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