Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2000-08-28
2003-04-29
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S349000, C257S350000, C257S351000
Reexamination Certificate
active
06555874
ABSTRACT:
FIELD OF THE INVENTION
This invention relates to CMOS integrated circuit fabrication processes, and specifically to a process for forming a SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrate. Such a structure is particularly suited for use in high-speed, mixed-signal circuits.
BACKGROUND OF THE INVENTION
The prior art describes the construction of a of SiGe bipolar CMOS (BiCMOS) by fabricating a SiGe heterojunction bipolar transistor (HBT) and a CMOS on a bulk silicon substrate. This process produces a very high performance HBT, for analog signal processing, and a CMOS, for digital signal processing and data storage. A significant problem with such structure is that the bulk CMOS is relatively slow and requires a relatively high power input. The fabrication process is relatively complex, and the resulting product is not suitable for hand-held wireless devices, because of its power requirements. By integrating a SiGe HBT and CMOS onto a silicon-on-insulator (SOI) substrate, the performance of the SiGe HBT and the low power, high-speed properties of SOI CMOS devices may be achieved in a single structure. The SiGe HBT provides a high-speed front-end transceiver and the CMOS provides data processing and storage.
SUMMARY OF THE INVENTION
A semiconductor structure includes, on a SOI substrate, a CMIOS formed on the substrate; and a SiGe HBT formed on the substrate. A method of fabricating a semiconductor structure includes preparing a SOI substrate having plural active regions thereon; forming a CMOS on the SOI substrate in a first active region; and forming a SiGe HBT on the SOI substrate in another active region.
An object of the invention is to provide a inixed-signal processing structure which has relatively low power consumption.
Another object of the invention is to provide a high performance SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrate.
This summary and objectives of the invention are provided to enable quick comprehension of the nature of the invention. A more thorough understanding of the invention may be obtained by reference to the following detailed description of the preferred embodiment of the invention in connection with the drawings.
REFERENCES:
patent: 5430318 (1995-07-01), Hsu
patent: 5521399 (1996-05-01), Chu et al.
patent: 5583059 (1996-12-01), Burghartz
patent: 5889293 (1999-03-01), Rutten et al.
patent: 6130458 (2000-10-01), Takagi et al.
patent: 6180442 (2001-01-01), Gris
patent: 6232649 (2001-05-01), Lee
patent: 6235567 (2001-05-01), Huang
patent: 6245604 (2001-06-01), Violette
patent: 6246094 (2001-06-01), Wong
patent: 6218060 (2001-08-01), Igarashi
patent: 6284581 (2001-09-01), Pan
patent: 406125044 (1994-05-01), None
Hsu Sheng Teng
Tweet Douglas James
Ulrich Bruce Dale
Ying Hong
Fahmy Wael
Ha Nathan W.
Krieger Scott C.
Rabdau Matthew D.
Ripma David C.
LandOfFree
Method of fabricating high performance SiGe heterojunction... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating high performance SiGe heterojunction..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating high performance SiGe heterojunction... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3021030