Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2002-04-09
2004-09-28
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S261000, C438S766000, C438S287000
Reexamination Certificate
active
06797645
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to a method of fabricating gate dielectric for use in semiconductor device, and more particularly, to a method of fabricating gate dielectric for use in semiconductor device having a high dielectric constant via nitridation.
BACKGROUND OF THE INVENTION
Thin ZrO
2
film, a film that has been spotlighted as a gate dielectric with high dielectric constant for next generation, is reported to enable to have excellent electrical properties via various processing optimizations. However, as is the case with other metal oxides, it becomes inevitable to perform heat treatment for thin film of ZrO
2
at a relatively high temperature when using the thin ZrO
2
film as a dielectric gate for MOSFET, and this results in the drastic increase in effective thickness due to the growth(increase) in interfacial layer of silicate or silicon oxide which is formed in the interface between silicon substrate and thin film of ZrO
2
.
SUMMARY OF THE INVENTION
The present invention relates to a method of fabricating gate dielectric for use in semiconductor device having a high dielectric constant comprising formation of a metal oxide on a silicon substrate, nitridation to incorporate nitrogen component to said metal oxide and reoxidation of said metal oxide that contains said nitrogen component. Examples of said metal oxides include ZrO
2
, HfO
2
, La
2
O
3
, Al
2
O
3
and Ta
2
O
5
, and other metal silicates such as ZrSi
x
O
y
, HfSi
x
O
y
, LaSi
x
O
y
, AlSi
x
O
y
and TaSi
x
O
y
can be also used for the same purpose. Further, the nitridation can be performed by heat-treating the resulting product, wherein said metal oxide is formed within, in a nitrogen-containing gas atmosphere; performed by plasma treatment by exposing said metal oxide to a nitrogen-containing plasma atmosphere; or performed by ion implantation of nitrogen component to said metal oxide.
Therefore, the object of the present invention is to provide a gate dielectric for use in semiconductor device which is able to remarkably inhibit the increase effective thickness resulted from a post heat-treatment at high temperature by performing steps of forming a film of metal oxide such as ZrO
2
followed by nitridation and reoxidation.
REFERENCES:
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6020243 (2000-02-01), Wallace et al.
Jeon et al.; “Electrical Characteristics of Thermally Stable ZrOxNy”; Gate Stack and Silicide Issues In Si Processing II, Symposium K, pp. 204, 210 and 211, (2001).
Hwang Hyun Sang
Jeon Sang Hun
Finnegan Henderson Farabow Garrett & Dunner LLP
Huynh Yennhu B.
Jr. Carl Whitehead
Kwangju Institute of Science and Technology
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