Method of fabricating flash memory cell

Details Method of fabricating flash memory cell Method of fabricating flash memory cell

1996-07-23

1998-11-17

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, 438528, 438585, 438910, H01L 218247

Patent

active

058375856

ABSTRACT:
The present invention discloses a method of fabricating flash memory cell for use in semiconductor memories. A nitrogen implantation step is added in the process to increase the performance of the device. The nitrogen implanted tunnel oxide exhibits a much higher electron conduction efficiency than the prior art tunnel oxides in both injection polarities. The value of charge-to-breakdown voltage of the nitrogen implanted tunnel oxide is also much larger than the narrow tunnel oxide. In addition, the electron trapping rate of the nitrogen implantation tunnel oxide is very small even under a very large electron fluence stressing (100 C/cm.sup.2).

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