Method of fabricating field effect transistor (FET) having...

Details Method of fabricating field effect transistor (FET) having... Method of fabricating field effect transistor (FET) having...

2008-05-20

2008-05-20

Tran, Long K. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S128000, C438S129000, C438S195000, C257S210000, C257SE21415, C257SE21444

Reexamination Certificate

active

11902403

ABSTRACT:
In a field effect transistor (FET), and a method of fabricating the same, the FET includes a semiconductor substrate, source and drain regions formed on the semiconductor substrate, a plurality of wire channels electrically connecting the source and drain regions, the plurality of wire channels being arranged in two columns and at least two rows, and a gate dielectric layer surrounding each of the plurality of wire channels and a gate electrode surrounding the gate dielectric layer and each of the plurality of wire channels.

REFERENCES:
patent: 4996574 (1991-02-01), Shirasaki
patent: 5583362 (1996-12-01), Maegawa
patent: 5965914 (1999-10-01), Miyamoto
patent: 6413802 (2002-07-01), Hu et al.
patent: 6583014 (2003-06-01), Wu
patent: 6605847 (2003-08-01), Kim et al.
patent: 2004/0007738 (2004-01-01), Fried et al.
patent: 2004/0063286 (2004-04-01), Kim et al.
patent: 2005/0191795 (2005-09-01), Chidambarrao et al.

Affiliated with

Also associated with

Rating

Method of fabricating field effect transistor (FET) having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating field effect transistor (FET) having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating field effect transistor (FET) having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3942240