Method of fabricating dynamic random memory

Details Method of fabricating dynamic random memory Method of fabricating dynamic random memory

1998-03-18

2000-01-25

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438298, H01L 21336

Patent

active

060177993

ABSTRACT:
A method of fabricating a dynamic random memory. On a semiconductor substrate comprising a memory cell region and a periphery circuit region, a first field implantation and a first anti-punch through implantation are performed. Using a photo-resist layer formed to cover the memory cell region as a mask, the periphery circuit region is performed with a second field implantation and a second anti-punch through implantation.

REFERENCES:
patent: 5594264 (1997-01-01), Shirahata et al.
patent: 5693505 (1997-12-01), Kobayashi
patent: 5939762 (1999-08-01), Lien

Affiliated with

Also associated with

Rating

Method of fabricating dynamic random memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating dynamic random memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating dynamic random memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2315480