Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-01-20
2000-09-19
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438253, 438396, 438399, H01L 218242, H01L 2120
Patent
active
061210854
ABSTRACT:
A method of making contact openings for memory cell units of DRAM IC devices is disclosed. The contact opening is used to connect the cell transistor source/drain terminal to the storage capacitor electrode located substantially above. The method includes the step of first patterning the initial opening in a shielding layer for the contact opening. The diameter of the initial opening is then reduced by the formation of sidewall spacers in initial opening. The initial opening in the shielding layer is then used to implement the etching for the formation of the contact opening. Due to reduced size of the contact opening, short-circuiting situations arising between the via formed in the contact opening and the bit lines next to the via as a result of misalignment in the process of fabrication can be reduced, thereby improving the device fabrication yield rates.
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Chien Sun-Chieh
Jenq Jason
Liang Chia-Wen
Wu Der-Yuan
Monin, Jr. Donald L.
Rao S.
United Microelectronics Corp.
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