Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2009-06-22
2011-12-13
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S050000, C438S517000, C438S455000, C438S459000, C257SE29324, C257SE21219, C257S619000, C257S415000
Reexamination Certificate
active
08076169
ABSTRACT:
The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps:a) making a monocrystalline first stop layer on a monocrystalline layer of a first substrate;b) growing a monocrystalline mechanical layer epitaxially on said first stop layer out of at least one material that is different from that of the stop layer;c) making a sacrificial layer on said active layer out of a material that is suitable for being etched selectively relative to said mechanical layer;d) making a bonding layer on the sacrificial layer;e) bonding a second substrate on the bonding layer; andf) eliminating the first substrate and the stop layer to reveal the surface of the mechanical layer opposite from the sacrificial layer, the active element being made by at least a portion of the mechanical layer.
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International Search Report for French Application No. 08/03497, filed Jun. 23, 2008.
Clavelier Laurent
Defay Emmanuel
Diem Bernard
Larrey Vincent
Perruchot Francois
Alston & Bird LLP
Baptiste Wilner Jean
Commissariat A L'energie Atomique
Smith Matthew
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