Method of fabricating an electromechanical device including...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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Details

C438S050000, C438S517000, C438S455000, C438S459000, C257SE29324, C257SE21219, C257S619000, C257S415000

Reexamination Certificate

active

08076169

ABSTRACT:
The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps:a) making a monocrystalline first stop layer on a monocrystalline layer of a first substrate;b) growing a monocrystalline mechanical layer epitaxially on said first stop layer out of at least one material that is different from that of the stop layer;c) making a sacrificial layer on said active layer out of a material that is suitable for being etched selectively relative to said mechanical layer;d) making a bonding layer on the sacrificial layer;e) bonding a second substrate on the bonding layer; andf) eliminating the first substrate and the stop layer to reveal the surface of the mechanical layer opposite from the sacrificial layer, the active element being made by at least a portion of the mechanical layer.

REFERENCES:
patent: 2005/0112843 (2005-05-01), Fischer et al.
patent: 2007/0072391 (2007-03-01), Pocas et al.
patent: 2008/0099860 (2008-05-01), Wuertz
patent: 2008/0138922 (2008-06-01), Wan
patent: 2008/0261055 (2008-10-01), Chu et al.
patent: 2008/0283917 (2008-11-01), Cheng et al.
patent: 0 554 795 (1993-08-01), None
patent: 2 906 078 (2008-03-01), None
International Search Report for French Application No. 08/03497, filed Jun. 23, 2008.

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