Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-06-24
2008-06-24
Dang, Phuc T. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S085000, C438S097000, C257S214000
Reexamination Certificate
active
07390715
ABSTRACT:
A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or benzyl derivative; dissolving the precursor in a solvent to produce a precursor solution, wherein a chalcogen element or compound can be added to the precursor solution to adjust the molar ratio of metal ion to chalcogen; and then applying the precursor solution onto a substrate in a specific coating manner, to form a film of the metal-chalcogenide after a curing process. Thereby, the existing method wherein an amorphous silicon active layer film is fabricated by plasma enhanced chemical vapor deposition (PECVD) is replaced.
REFERENCES:
patent: 6709887 (2004-03-01), Moore et al.
patent: 2005/0009225 (2005-01-01), Mitzi et al.
patent: 2005/0158909 (2005-07-01), Milliron et al.
Cheng Hua-Chi
Chuang Bor-Chuan
Hsiao Ming-Nan
Ou Chun-Yao
Wang Chao-Jen
AU Optronics Corp.
Chi Mei Optoelectronics Corp.
Chunghwa Picture Tubes Ltd.
Dang Phuc T.
HannStar Display Corp.
LandOfFree
Method of fabricating active layer thin film by metal... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating active layer thin film by metal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating active layer thin film by metal... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2803906