Method of fabricating a semiconductor device with multiple...

Details Method of fabricating a semiconductor device with multiple... Method of fabricating a semiconductor device with multiple...

2004-07-01

2008-07-22

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S981000

Reexamination Certificate

active

07402480

ABSTRACT:
The individual performance of various transistors is optimized by tailoring the thickness of the gate oxide layer to a particular operating voltage. Embodiments include forming transistors with different gate oxide thicknesses by initially depositing one or more gate oxide layers with intermediate etching to remove the deposited oxide from active regions wherein transistors with relatively thinner gate oxides are to be formed, and then implementing one or more thermal oxidation steps. Embodiments include forming semiconductor devices comprising transistors with two different gate oxide thicknesses by initially depositing an oxide film, selectively removing the deposited oxide film from active areas in which low voltage transistors having a relatively thin gate oxide are to be formed, and then implementing thermal oxidation.

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Moazzami, Reza., et al. “A High-Quality Stacked Thermal/LPCVD Gate Oxide Technology for ULSI.” IEEE Electron Device Letters, vol. 14, No. 2, Feb. 1993, pp. 72-73.

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