Method of fabricating a semiconductor device with multiple...

Details Method of fabricating a semiconductor device with multiple... Method of fabricating a semiconductor device with multiple...

2011-08-30

2011-08-30

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S097000, C257SE21415

Reexamination Certificate

active

08008141

ABSTRACT:
A semiconductor device with multiple channels includes a semiconductor substrate and a pair of conductive regions spaced apart from each other on the semiconductor substrate and having sidewalls that face to each other. A partial insulation layer is disposed on the semiconductor substrate between the conductive regions. A channel layer in the form of at least two bridges contacts the partial insulation layer, the at least two bridges being spaced apart from each other in a first direction and connecting the conductive regions with each other in a second direction that is at an angle relative to the first direction. A gate insulation layer is on the channel layer, and a gate electrode layer on the gate insulation layer and surrounding a portion of the channel layer.

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Application and prosecution history of U.S. Appl. No. 11/517,211, filed Sep. 7, 2006, by Ming Li, et al., entitled “Semiconductor Device With Multiple Channels and Method of Fabricating the Same”.

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