Method of fabricating a semiconductor device using a full...

Details Method of fabricating a semiconductor device using a full... Method of fabricating a semiconductor device using a full...

2011-06-28

2011-06-28

Vu, David (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21423

Reexamination Certificate

active

07968410

ABSTRACT:
A method of fabricating a semiconductor device includes: forming a first polysilicon layer having a first thickness in a peripheral circuit region formed on a substrate; forming a stack structure comprising a first tunneling insulating layer, a charge trap layer, and a blocking insulating layer in a memory cell region formed on the substrate; forming a second polysilicon layer having a second thickness that is less than the first thickness on the blocking insulating layer; and forming gate electrodes by siliciding the first and second polysilicon layers.

REFERENCES:
patent: 7217610 (2007-05-01), Graf et al.
patent: 2006/0208338 (2006-09-01), Lee et al.
patent: 2006/0263961 (2006-11-01), Kittl et al.
patent: 2007/0026621 (2007-02-01), Cho et al.
patent: 2007/0173025 (2007-07-01), Akamatsu
patent: 2007/0228458 (2007-10-01), Henson et al.
patent: 2007-201063 (2009-08-01), None

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