Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-08-17
2008-09-02
Kim, Vickie (Department: 4172)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S153000, C438S154000, C438S149000
Reexamination Certificate
active
07419859
ABSTRACT:
Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed.
REFERENCES:
patent: 6525403 (2003-02-01), Inaba et al.
patent: 7122871 (2006-10-01), Lee et al.
patent: 7352037 (2008-04-01), Kim et al.
patent: 2004/0217433 (2004-11-01), Yeo et al.
patent: 2007/0045750 (2007-03-01), Liao et al.
patent: 2007/0235833 (2007-10-01), Cheng et al.
patent: 2007/0267668 (2007-11-01), Fischer
patent: 2007/0281488 (2007-12-01), Wells et al.
Cho Eun-Suk
Choi Byung-Yong
Kim Suk-Pil
Kim Tae-Yong
Kim Won-Joo
Doan Nga
Harness & Dickey & Pierce P.L.C.
Kim Vickie
Samsung Electronics Co,. Ltd.
LandOfFree
Method of fabricating a semiconductor device having a single... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a semiconductor device having a single..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device having a single... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3970323