Method of fabricating a semiconductor device, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor

Reexamination Certificate

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Details

C257S686000, C257S777000, C257SE23040

Reexamination Certificate

active

07915710

ABSTRACT:
A method of fabricating a semiconductor device includes providing a semiconductor substrate having an active surface, thinning the substrate by removing material from a second surface of the substrate opposite the active surface, bonding a metal carrier to the second surface of the thinned substrate, forming a via opening in the thinned substrate, forming a conductive member in the via opening, and patterning the metal carrier bonded to the second surface of the thinned substrate to form a metal pattern.

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patent: 6982487 (2006-01-01), Kim et al.
patent: 7193297 (2007-03-01), Yamaguchi
patent: 7214615 (2007-05-01), Miyazawa
patent: 2004/0178484 (2004-09-01), Burdick et al.
patent: 2004/0188822 (2004-09-01), Hara
patent: 2007/0045868 (2007-03-01), Furuyama et al.
patent: 2004-297045 (2004-10-01), None
patent: 2006-191126 (2006-07-01), None
patent: 10-2004-0083796 (2004-10-01), None
patent: 10-2006-0111305 (2006-10-01), None

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