Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2011-03-29
2011-03-29
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S686000, C257S777000, C257SE23040
Reexamination Certificate
active
07915710
ABSTRACT:
A method of fabricating a semiconductor device includes providing a semiconductor substrate having an active surface, thinning the substrate by removing material from a second surface of the substrate opposite the active surface, bonding a metal carrier to the second surface of the thinned substrate, forming a via opening in the thinned substrate, forming a conductive member in the via opening, and patterning the metal carrier bonded to the second surface of the thinned substrate to form a metal pattern.
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Ahn Eun Chul
Kwon Yong Chai
Lee Dong Ho
Lee Jong Ho
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Smoot Stephen W
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