Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2007-05-21

2009-02-10

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S256000, C438S399000

Reexamination Certificate

active

07488644

ABSTRACT:
Bit lines having first conductive patterns and bit line mask patterns are formed on a first insulating layer between capacitor contact regions of a substrate. An oxide second insulating layer is formed on the bit lines and contact patterns are formed to open storage node contact hole regions corresponding to portions of the second insulating layer. First spacers are formed on sidewalls of the etched portions. The second and first insulating layers are etched to form storage node contact holes exposing the capacitor contact regions. Simultaneously, second spacers of the second insulating layer are formed beneath the first spacers. A second conductive layer fills the storage node contact holes to form storage node contact pads. A loss of the bit line mask pattern decreases due to the reduced thickness of the bit line mask pattern and a bit line loading capacitance decreases due to the second spacers.

REFERENCES:
patent: 5500080 (1996-03-01), Choi
patent: 5879986 (1999-03-01), Sung
patent: 6093641 (2000-07-01), Park
patent: 6214715 (2001-04-01), Huang et al.
patent: 6359302 (2002-03-01), Parekh et al.
patent: 6458692 (2002-10-01), Kim
patent: 7056828 (2006-06-01), Chung et al.
patent: 2002/0090792 (2002-07-01), Wu et al.
patent: 2004/0188806 (2004-09-01), Chung et al.
patent: 2001-217405 (2001-08-01), None
English language abstract of Japanese Publication No. 2001-217405.

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