Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1996-12-19

2000-06-20

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438203, 438275, 438279, 438301, 438232, 438367, H01L 218238

Patent

active

060777362

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of preparing a semiconductor substrate having a first region and a second region, forming a first gate electrode and a second gate electrode over the semiconductor substrate at the first and second regions, respectively, implanting a first impurity ion into the substrate of the first region using the first gate electrode as a mask, implanting a second impurity ion into the substrate of the second region using the second gate electrode as a mask, forming sidewall spacers at both sides of each of the first and second gate electrodes, and implanting the second impurity ion into the first and second regions using the first and second gate electrodes and the sidewall spacers as masks.

REFERENCES:
patent: 4736233 (1988-04-01), McDavid
patent: 4935379 (1990-06-01), Toyoshima
patent: 4977099 (1990-12-01), Kotaki
patent: 5024960 (1991-06-01), Haken
patent: 5329482 (1994-07-01), Nakajima et al.
patent: 5396098 (1995-03-01), Kim et al.
patent: 5438008 (1995-08-01), Ema
patent: 5514611 (1996-05-01), Kim et al.
patent: 5527722 (1996-06-01), Hutter et al.
patent: 5614432 (1997-03-01), Goto
patent: 5672527 (1997-09-01), Lee
patent: 5686324 (1997-11-01), Wang et al.
patent: 5719424 (1998-02-01), Ahmad et al.
patent: 5834352 (1998-11-01), Choi
patent: 5841174 (1998-11-01), Arai

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