Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Patent
1995-06-06
1997-04-01
Breneman, R. Bruce
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
117 84, 257415, 257417, 257418, 73777, 216 2, 438489, H01L 2120
Patent
active
056165145
ABSTRACT:
A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).
REFERENCES:
patent: 3909924 (1975-10-01), Vindasius et al.
patent: 4003127 (1977-01-01), Jaffe et al.
patent: 4665610 (1987-05-01), Barth
patent: 4670969 (1987-06-01), Yamada et al.
patent: 4699006 (1987-10-01), Boxenhorn
patent: 4948456 (1990-08-01), Schubert
patent: 5151763 (1992-09-01), Marek et al.
patent: 5194402 (1993-03-01), Ehfeld et al.
patent: 5360754 (1994-11-01), Pribat et al.
patent: 5429993 (1995-07-01), Beitman
C.W. Pearce, "Epitasy", VlSI Technology, pp. 51-91, International Student Edition, McGraw-Hill International Book Company
A.C. Adams, "Dielectric and Polysilicon Film Deposition", pp. 93-107, International Student Edition, McGraw-Hill International Book Company.
Muchow Joerg
Muenzel Horst
Offenberg Michael
Waldvogel Winfried
Breneman R. Bruce
Paladugu Ramamohan Rao
Robert & Bosch GmbH
LandOfFree
Method of fabricating a micromechanical sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a micromechanical sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a micromechanical sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-538589