Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2006-12-20
2010-11-23
McDonald, Rodney G (Department: 1795)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192120, C204S192150, C204S192230, C204S298060, C204S298080
Reexamination Certificate
active
07837838
ABSTRACT:
The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material. Embodiments of the invention also provide a cluster tool that is adapted to form a high-k dielectric material, terminate the surface of the high-k dielectric material, perform any desirable post treatment steps, and form the polysilicon and/or metal gate layers.
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pate
Chua Thai Cheng
Holland John P.
Hung Steven
Liu Patricia M.
Paterson Alex M.
Applied Materials Inc.
McDonald Rodney G
Patterson & Sheridan LLP
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