Method of fabricating a flash memory device

Details Method of fabricating a flash memory device Method of fabricating a flash memory device

2007-12-04

2007-12-04

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C257SE21179, C257SE21680

Reexamination Certificate

active

11517254

ABSTRACT:
A method of fabricating a flash memory device using a process for forming a self-aligned floating gate is provided. The method comprises forming mask patterns on a substrate, etching the substrate using the mask patterns as an etch mask to form a plurality of trenches, and filling the trenches with a first insulating layer, wherein sidewalls of the mask patterns remain exposed after filling the trenches with the first insulating layer. The method further comprises forming spacers on the exposed sidewalls of the mask patterns, filling upper insulating spaces with a second insulating layer thereby defining isolation layers, and removing the mask patterns and the spacers.

REFERENCES:
patent: 6849519 (2005-02-01), Dong
patent: 7037785 (2006-05-01), Dong et al.
patent: 7115940 (2006-10-01), Sumino et al.
patent: 7151043 (2006-12-01), Kim et al.
patent: 2004/0072408 (2004-04-01), Yun et al.
patent: 11-176962 (1999-07-01), None

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