Method of fabricating a field effect transistor

Details Method of fabricating a field effect transistor Method of fabricating a field effect transistor

2003-10-29

2010-02-09

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S263000, C257S314000, C257S315000

Reexamination Certificate

active

07659165

ABSTRACT:
A field effect transistor in which at least one vertically arranged semiconductor column, with a diameter in the nanometer range, is located between a source and a contact and has an annular surround of a gate contact with retention of an insulation gap. A simplified production method is disclosed and the transistor produced thus is embodied such that the semiconductor columns are embedded in a first and a second insulation layer, between which a metal layer, running to the outside as a gate contact, is arranged, the ends of which, extending upwards through the second insulation layer, are partly converted into an insulator, or removed and replaced by an insulation material.

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