Method of fabricating a ferromagnetic memory device

Details Method of fabricating a ferromagnetic memory device Method of fabricating a ferromagnetic memory device

2006-03-21

2006-03-21

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C438S622000, C438S631000

Reexamination Certificate

active

07015094

ABSTRACT:
A ferroelectric memory device and a method of fabricating the same are disclosed. Four interlayer dielectric layers are stacked on cell array and peripheral circuit regions on a semiconductor substrate. A gate contact pad and a source/drain contact pad are connected to a gate electrode and a source/drain of the peripheral circuit transistor through the first interlayer dielectric layer. A gate contact plug and a source/drain contact plug are respectively connected to the gate contact pad and the source/drain contact pad through the second interlayer dielectric layer. First via holes expose the gate contact plug and the source contact plug through the third interlayer dielectric layer. A first interconnection extends between the third and fourth interlayer dielectric layers, covering the sidewalls of the first via holes and connected to at least one of the gate contact plug and the source/drain contact plug.

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