Method of fabricating a composite gate dielectric layer

Details Method of fabricating a composite gate dielectric layer Method of fabricating a composite gate dielectric layer

2007-08-07

2007-08-07

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C257SE21625

Reexamination Certificate

active

10227091

ABSTRACT:
A semiconductor device having composite dielectric layer formed between a silicon substrate and a gate electrode. The composite gate dielectric layer including a layer of silicon oxide, SiOx≦2, having a dielectric constant of greater than about 3.9 and about 12 or less, and a complementary dielectric layer for inhibiting the flow of leakage current through the composite dielectric layer.

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