Method of fabricating a capacitor of a dynamic random access mem

Details Method of fabricating a capacitor of a dynamic random access mem Method of fabricating a capacitor of a dynamic random access mem

1998-05-15

2000-03-14

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, H01L 218242

Patent

active

060372060

ABSTRACT:
A method for fabricating a capacitor of a DRAM includes a lower conductive layer of the capacitor is formed over a substrate and is electrically coupled to an interchangeable source/drain region through a contact window penetrating an insulating layer. Then performing etching process on the lower conductive layer so as to form a fence-like plate with a higher height than a thickness of the lower conductive layer and adhere to the lower conductive layer. Next a media conductive layer is formed over the lower conductive layer and the fence-like plate. Then the technology of etching back is utilized to round the sharp area on the tip of the fence-like plate. The lower conductive layer and the media conductive layer are electrically coupled together as a lower electrode. Then, a dielectric thin film is formed over the media conductive layer and an upper electrode is formed over the dielectric thin film. Therefore, a MIM capacitor according to the preferred embodiment of the invention is formed.

REFERENCES:
patent: 5712202 (1998-01-01), Liaw et al.
patent: 5776815 (1998-07-01), Pan et al.
patent: 5843818 (1998-12-01), Joo et al.
patent: 5972769 (1999-10-01), Tsu et al.

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