Method of fabricating a buried-gate semiconductor device and...

Details Method of fabricating a buried-gate semiconductor device and... Method of fabricating a buried-gate semiconductor device and...

2011-07-12

2011-07-12

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S282000, C257S412000, C257SE29242

Reexamination Certificate

active

07977187

ABSTRACT:
A semiconductor device includes a semiconductive channel region and a gate region. The gate region has at least one buried part extending under the channel region. The buried part of the gate region is formed by forming a cavity under the channel region. That cavity is at least partial filled with silicon and a metal. An annealing step is performed so as to form a silicide of said metal in the cavity. The result is a totally silicided buried gate for the semiconductor device.

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