Method of fabricating a bottle trench and a bottle trench...

Details Method of fabricating a bottle trench and a bottle trench... Method of fabricating a bottle trench and a bottle trench...

2008-06-17

2008-06-17

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27092

Reexamination Certificate

active

07387930

ABSTRACT:
A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.

REFERENCES:
patent: 5658816 (1997-08-01), Rajeevakumar
patent: 6777303 (2004-08-01), Schrems et al.
patent: 7078289 (2006-07-01), Hsu
patent: 7122437 (2006-10-01), Dyer et al.
patent: 7122439 (2006-10-01), Kwon et al.
patent: 2003/0036241 (2003-02-01), Tews
patent: 2005/0133846 (2005-06-01), Dyer et al.
patent: 2005/0164464 (2005-07-01), Hecht et al.

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