Method of fabricating a bit line of a dynamic random access memo

Details Method of fabricating a bit line of a dynamic random access memo Method of fabricating a bit line of a dynamic random access memo

1996-11-19

1998-07-14

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

057803374

ABSTRACT:
A method of forming a bit line of a dynamic random access memory. An insulating layer is used to cover the source/drain region in a substrate. A trench is formed in the insulating layer above the source/drain region. Then, a portion of the insulating layer inside the trench is removed to form an opening which exposes the source/drain region. A conductor is used to fill the trench and the opening so as to form a bit line and a metal plug, respectively.

REFERENCES:
patent: 5248628 (1993-09-01), Okabe et al.
patent: 5539231 (1996-07-01), Suganaga et al.

Affiliated with

Also associated with

Rating

Method of fabricating a bit line of a dynamic random access memo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a bit line of a dynamic random access memo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a bit line of a dynamic random access memo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1881176