Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-05-31
2005-05-31
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S703000, C438S706000, C438S719000, C438S745000
Reexamination Certificate
active
06900133
ABSTRACT:
Disclosed herein is an easy and well-integrated method of etching features to different depths in a crystalline substrate, such as a single-crystal silicon substrate. The method utilizes a specialized masking process and takes advantage of a highly selective etch process. The method provides a system of interconnected, variable depth reservoirs and channels. The plasma used to etch the channels may be designed to provide a sidewall roughness of about 200 nm or less. The resulting structure can be used in various MEMS applications, including biomedical MEMS and MEMS for semiconductor applications.
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Chinn Jeffrey D.
Cooper James A.
Guenther Rolf A.
Rattner Michael B.
Applied Materials INC
Church Shirley L.
Norton Nadine G.
Umez-Eronini Lynette T.
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