Active solid-state devices (e.g. – transistors – solid-state diode – Polysilicon containing oxygen – nitrogen – or carbon
Reexamination Certificate
2006-04-25
2006-04-25
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Polysilicon containing oxygen, nitrogen, or carbon
C257S632000, C257S635000
Reexamination Certificate
active
07034409
ABSTRACT:
A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.
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Dworkin Larry A.
Naik Mehul
Xia Li-Qun
Xu Ping
Applied Materials Inc.
Hoang Quoc
Nelms David
Patterson & Sheridan
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